rf sputtering中文是什么意思

• 射频溅射

• "rf"中文翻译     RF ＝ 1.radio frequency ...
• "sputter"中文翻译    vi.,vt. 1.飞溅唾沫；(食渣等)飞溅。 2.唾沫 ...
• "rf double sputtering" 中文翻译 :    对射频溅射; 双射频溅射
• "sputtering" 中文翻译 :    飞溅; 溅镀金属; 溅射; 喷溅涂覆法; 喷涂
• "rf" 中文翻译 :     RF ＝ 1.radio frequency 射频，无线电频率。 2.range finder 【摄，军】(测定目标距离的)测距计，光学测距仪。 3.rapid-fire (枪等)速射的。 4. 〔法语〕 République Francaise 法兰西共和国。
• "anode sputtering" 中文翻译 :    阳极溅射
• "bias sputtering" 中文翻译 :    偏压溅射; 偏置溅射
• "biasing sputtering" 中文翻译 :    偏压溅射
• "bulk sputtering" 中文翻译 :    容积溅射
• "catbode sputtering" 中文翻译 :    阴极溅射
• "cathod sputtering" 中文翻译 :    阴极溅射
• "cathode sputtering" 中文翻译 :    等离子阴极溅射; 阴极爆蚀; 阴极溅射
• "cathodic sputtering" 中文翻译 :    阴极溅散; 阴极溅射
• "catholic sputtering" 中文翻译 :    阴极溅射法
• "catodic sputtering" 中文翻译 :    阴极溅射
• "co-sputtering" 中文翻译 :    共溅射
• "collimate sputtering" 中文翻译 :    准直溅镀
• "cool sputtering" 中文翻译 :    冷溅射
• "diode sputtering" 中文翻译 :    二极管溅射; 二极溅射
• "evaporation and sputtering" 中文翻译 :    热蒸镀及溅镀
• "getter sputtering" 中文翻译 :    吸气喷镀
• "inspiration sputtering" 中文翻译 :    吸气溅射
• "ion sputtering" 中文翻译 :    离子溅镀; 离子溅射
• "ionization by sputtering" 中文翻译 :    溅射电离
• "magnetron sputtering" 中文翻译 :    磁控管溅射; 磁控溅射

• Meanwhile , there are some changes in the experimental process compared with rf sputtering without magnetic field
  与此同时，沉积薄膜的过程中发生了明显变化。
• The study on ce02 - ti02 films can supply a theory and experiment guidance for making ce02 - ti02 coating on glasses by rf sputtering
  本论文的研究为磁控溅射法制备ceo _ 2 - tio _ 2薄膜提供了一定的理论和实践依据。
• The influence of thickness , kinds of rf sputtering gas , flux of gas , and gas pressure to the produced licoo _ 2 film was studied , which affected the preferable orientation of the crystal
  研究了厚度、溅射气氛、气体流量、气压值等对制备licoo _ 2薄膜中晶体生长择优取向的影响。
• 2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity
  掺s后的氮化硼薄膜表现出n型导电，未掺杂的氮化硼薄膜的电阻率1 . 8 1011 cm ，掺杂后的氮化硼薄膜的电阻率为7 . 3 107 cm 。
• In this article , by rf sputtering the licoo _ 2 film was produced . by hot pressing and cold pressing ( and sintering ) , the licoo _ 2 targets used in the rf sputtering were produced differently . both technics of the preparation of the licoo _ 2 film and the licoo _ 2 target were studied
  本文使用热压烧结方法和冷压后烧结方法制备了磁控溅射用的licoo _ 2靶材,并使用磁控溅射方法制备了licoo _ 2薄膜,对两者的制备工艺进行了研究。
• While adding 1 % binder the preferable target was produced , and the density was 4 . 89g . cm - 3 , which was 88 % of the theoretic density of the licoo _ 2 with ar as the sputtering gas , the technics of rf sputtering to produce the licoo _ 2 film were studied systematically
  在冷压烧结方法制备licoo _ 2靶材的过程中,烧结前添加了不同量粘结剂,就综合纯度和粘结性能两方面考虑,加入1 %的粘结剂较为理想。所制备的licoo _ 2靶材密度为4 . 89g / cm3 ,达到licoo _ 2理论密度的88 % 。
• 1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon
  研究了衬底负偏压和射频功率对制备立方氮化硼薄膜的影响立方氮化硼薄膜沉积在p型si （ 100 ） （ 8 15 cm ）衬底上，靶材为h - bn靶（纯度达99 . 99 ） ，溅射气体为氩气和氮气混合而成，制样过程中，衬底加直流负偏压。
• By comparing the xrd charts of licoo _ 2 films produced with different ratio of ar / o2 , the preferable ratio was determined , which was 3 / 1 . with ar / o _ 2 ( 3 / 1 ) as the sputtering gas , the technics of rf sputtering to produce the licoo _ 2 film were studied systematically . the best conditions to produce the licoo _ 2 film were that the power of rf sputtering was 75w , the flux of ar / o2 was 28sccm , and the pressure was 15mtorr
  通过对不同ar 、 o2混合气的比率溅射得到的样品xrd谱图比较,确定了溅射licoo _ 2薄膜时的最佳ar / o2配比,并通过正交实验确定了溅射气氛为ar / o2混合气且配比为3 / 1时溅射licoo _ 2薄膜的最佳工艺条件:溅射功率为75w 、气体流量为28sccm 、气压值为15mtorr 。
• The static recording by sil system is performed on phase - change medium , and the recorded line width is thinner by the factor of 1 . 44 than the recording width without sil system . the properties of sb layer super resolution near - field structure is also studied . the sin / sb / sin film structure is deposited on substrate of k9 glass by rf sputtering technology
  Sil飞行头系统与光数据存储光学头实验系统相结合，在相变记录介质上得到了0 . 45 m的静态记录线宽，该结果与非sil存储系统的记录线宽( 0 . 65 m )相比压缩了1 . 44倍。
• All my samples with good orientation are prepared by rf sputtering . then we invest surface morphology and crystal structure , optical and electrical properties of zno films by afm , xrd , hall testing , ultraviolet - visible spectrum photometer and xps et al . zno films are fabricated on gaas substrate
  本文用射频反应磁控溅射制备了高度c轴择优取向的zno薄膜,采用原子力显微镜( afm ) 、 x射线( xrd ) 、 hall测试仪、紫外?可见分光光度计和x光电子能谱等分析测试手段,研究了样品的表面形貌、晶体结构、光学和电学性能等。

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